SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/194419

Kind Code:

A1

Abstract:

This semiconductor device (101) has, when viewed in plan, an active region (R1) and a termination region (R2) that is in a region different from the active region (R1). The semiconductor device (101) comprises a first electrode (80), a second electrode (81) and a metal electrode film (87S). The first electrode (80) is arranged in the active region (R1). The second electrode (81) is arranged in the termination region (R2), and is separated from the first electrode (80). The metal electrode film (87S) electrically connects the first electrode (80) and the second electrode (81).

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Inventors:

HINO SHIRO (JP)
SADAMATSU KOJI (JP)
HATTA HIDEYUKI (JP)
KAGAWA YASUHIRO (JP)
SUGAWARA KATSUTOSHI (JP)

Application Number:

PCT/JP2016/055982

Publication Date:

December 08, 2016

Filing Date:

February 29, 2016

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)

International Classes:

H01L21/336; H01L21/66; H01L27/04; H01L29/12; H01L29/47; H01L29/78; H01L29/861; H01L29/868; H01L29/872

Domestic Patent References:

WO2010125661A1

2010-11-04

Foreign References:

JP2010050211A	2010-03-04
JP2003017701A	2003-01-17
JP2015065250A	2015-04-09
JP2007318031A	2007-12-06

Attorney, Agent or Firm:

YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)

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