Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/135147
Kind Code:
A1
Abstract:
This semiconductor device is provided with a semiconductor substrate (1), a first conductivity type first semiconductor layer (2), a second conductivity type second semiconductor layer (3), a first conductivity type first semiconductor region (4), a second conductivity type second semiconductor region (5), a gate electrode (8), a first electrode (10), and a gate electrode pad (11). The recombination rate of carriers in a first lower region facing, in the depth direction, the gate electrode pad (11) is lower than that in a second lower region facing, in the depth direction, the first electrode (10). Accordingly, in a case where a high potential is applied to a source electrode so as to drive a built-in PN diode, occurrence of crystal defects can be suppressed.
Inventors:
HOSHI YASUYUKI (JP)
KUMADA KEISHIROU (JP)
HASHIZUME YUICHI (JP)
KUMADA KEISHIROU (JP)
HASHIZUME YUICHI (JP)
Application Number:
PCT/JP2017/042929
Publication Date:
July 26, 2018
Filing Date:
November 29, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Domestic Patent References:
| WO2016039071A1 | 2016-03-17 |
Foreign References:
| JP2013152981A | 2013-08-08 | |||
| JP2011061064A | 2011-03-24 | |||
| JP2013026563A | 2013-02-04 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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