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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/106983
Kind Code:
A1
Abstract:
The influence of a crystal defect occurring in a semiconductor substrate in the vicinity of an element isolation region is mitigated. A semiconductor device according to the present invention is provided with a semiconductor element region, an element isolation region, and a heavily doped impurity region. The semiconductor element region is disposed on a surface of a semiconductor substrate. The element isolation region is formed at a prescribed depth from the surface of the semiconductor substrate and isolates the semiconductor element region. The heavily doped impurity region is configured to have a higher impurity concentration than the semiconductor substrate, is disposed between the semiconductor element region and the element isolation region, and is not disposed below the element isolation region.

Inventors:
ENOMOTO TAKAYUKI (JP)
Application Number:
PCT/JP2018/038287
Publication Date:
June 06, 2019
Filing Date:
October 15, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/76; H01L27/146
Foreign References:
US20160079344A12016-03-17
JPH05109885A1993-04-30
JPH0289371A1990-03-29
JP2005197682A2005-07-21
JP2008066580A2008-03-21
JPH05291392A1993-11-05
JPH07161808A1995-06-23
Attorney, Agent or Firm:
MATSUO Kenichiro (JP)
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