Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/049420
Kind Code:
A1
Abstract:
Provided is a semiconductor device which has good electrical properties and high reliability. This semiconductor device includes a first insulator, a first conductor and a second conductor on the first insulator, an oxide disposed between the first conductor and the second conductor, a second insulator on the first conductor, the second conductor, and the oxide, and a third conductor on the second insulator. The first conductor has a side surface with a region that contacts one side surface of the oxide, the second conductor has a side surface with a region that contacts the other side surface of the oxide, the height of the top surface of the first conductor, the height of the top surface of the second conductor, and the height of the top surface of the oxide are substantially the same, the first conductor has a conductivity that is higher than that of the oxide, and the second conductor has a conductivity that is higher than that of the oxide.
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Inventors:
TAKAHASHI MASAHIRO (JP)
OKUNO NAOKI (JP)
KANAGAWA TOMOSATO (JP)
MIZUKAMI SHOTA (JP)
OKUNO NAOKI (JP)
KANAGAWA TOMOSATO (JP)
MIZUKAMI SHOTA (JP)
Application Number:
PCT/IB2019/057266
Publication Date:
March 12, 2020
Filing Date:
August 29, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/8239; H01L21/8242; H01L27/105; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Foreign References:
| JP2018133404A | 2018-08-23 | |||
| JP2017520914A | 2017-07-27 | |||
| JP2015065426A | 2015-04-09 | |||
| JP2013089613A | 2013-05-13 | |||
| JP2015043415A | 2015-03-05 |
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