Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/103655
Kind Code:
A1
Abstract:
The present application relates to a semiconductor device, comprising a substrate (200), with a body region (221) being formed on the substrate (200), and a well region (222) being formed in the body region (221); and further comprising trenches penetrating through the well region (222) and the body region (221) and extending to the substrate (200), wherein a first polysilicon body (232) and a second polysilicon body (235), which are isolated from each other, are respectively formed at the bottom and the top of each trench to form a split gate structure, the trenches are filled with an inter-layer dielectric layer (240), a conductive plug (260) penetrating through the inter-layer dielectric layer (240) and extending into the first polysilicon body (232) is formed in each trench, the conductive plug (260) is isolated from the second polysilicon body (235) by means of the inter-layer dielectric layer (240), the conductive plug (260) is connected to a source electrode, and the second polysilicon body (235) is connected to a gate electrode.
Inventors:
FANG DONG (CN)
BIAN ZHENG (CN)
BIAN ZHENG (CN)
Application Number:
PCT/CN2019/114244
Publication Date:
May 28, 2020
Filing Date:
October 30, 2019
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| CN106876279A | 2017-06-20 | |||
| CN106876279A | 2017-06-20 | |||
| CN103151382A | 2013-06-12 | |||
| CN106057674A | 2016-10-26 | |||
| US20180323155A1 | 2018-11-08 |
Other References:
See also references of EP 3886178A4
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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