Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/201870
Kind Code:
A1
Abstract:
Provided is a semiconductor device having little variation in transistor characteristics. The semiconductor device has: a first insulator; a first oxide on the first insulator; a second oxide on the first oxide; first and second conductors and a third oxide on the second oxide; a second insulator on the first conductor; a third insulator on the second conductor; first and second layers; fourth to sixth insulators; a seventh insulator on the third oxide; and a third conductor on the seventh insulator, wherein the sixth insulator has a region in contact with the upper surface of the first insulator, the first layer has a region in contact with the side surfaces of the first and second oxides, the side surface of the first conductor, and the upper surface of the first insulator, the second layer has a region in contact with the side surfaces of the first and second oxides, the side surface of the second conductor, and the upper surface of the first insulator, the fourth insulator is located on the first insulator with the first layer therebetween, and the fifth insulator is located on the first insulator with the second layer therebetween.
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Inventors:
YAMAZAKI SHUNPEI (JP)
SASAGAWA SHINYA (JP)
ITO SHUNICHI (JP)
TAKAHASHI ERIKA
KAKEHATA TETSUYA (JP)
SASAGAWA SHINYA (JP)
ITO SHUNICHI (JP)
TAKAHASHI ERIKA
KAKEHATA TETSUYA (JP)
Application Number:
PCT/IB2020/052441
Publication Date:
October 08, 2020
Filing Date:
March 18, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108
Foreign References:
| JP2019047101A | 2019-03-22 | |||
| JP2018107447A | 2018-07-05 |
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