Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/145397
Kind Code:
A1
Abstract:
In the present invention, a region in which carrier lifetime is adjusted is formed easily using a method in which little damage occurs to a prescribed surface of a semiconductor substrate. Provided is a semiconductor device provided with: a semiconductor substrate which has an upper surface and a lower surface; a first region which is provided in a region on the upper surface side of the semiconductor substrate and which has a first chemical concentration peak of a first impurity at a first depth position; and a second region which is provided in a region of the semiconductor substrate differing from the first region and which has a second chemical concentration peak of the first impurity at the first depth position, wherein at the first depth position, the concentration of recombination centers in the second region is lower than the concentration of recombination centers in the first region.
Inventors:
KUBOUCHI MOTOYOSHI (JP)
YOSHIMURA TAKASHI (JP)
YOSHIMURA TAKASHI (JP)
Application Number:
PCT/JP2021/001135
Publication Date:
July 22, 2021
Filing Date:
January 14, 2021
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/265; H01L21/322; H01L21/336; H01L29/739; H01L29/78
Domestic Patent References:
| WO2016204227A1 | 2016-12-22 | |||
| WO2014208404A1 | 2014-12-31 | |||
| WO2017146148A1 | 2017-08-31 | |||
| WO2019181852A1 | 2019-09-26 |
Foreign References:
| JP2018125537A | 2018-08-09 | |||
| JP2015185742A | 2015-10-22 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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