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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/139447
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device having a transistor of very small size. The semiconductor device comprises a semiconductor layer, a first electrically conductive layer, a second electrically conductive layer, a third electrically conductive layer, a first insulation layer, and a second insulation layer. The first insulation layer is provided on the first electrically conductive layer, said first insulation layer having a first opening that reaches the first electrically conductive layer. The second electrically conductive layer is provided on the first insulating layer, said second electrically conductive layer having a second opening in a region overlapping the first opening. The semiconductor layer is in contact with the top surface of the first electrically conductive layer, the side surface of the first insulating layer, and the top and side surfaces of the second electrically conductive layer. The second insulating layer is provided on the semiconductor layer. The third electrically conductive layer is provided on the second insulating layer. The first insulation layer has a structure obtained by laminating a third insulating layer, and a fourth insulating layer on the third insulating layer. The fourth insulation layer has a region of greater film density than the third insulation layer.

Inventors:
HOSAKA YASUHARU
SHIMA YUKINORI
JINTYOU MASAMI
NAKADA MASATAKA
KOEZUKA JUNICHI (JP)
OKAZAKI KENICHI (JP)
Application Number:
PCT/IB2023/050232
Publication Date:
July 27, 2023
Filing Date:
January 11, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G09F9/30; H01L29/786; H01L21/336; H01L27/146; H05B33/02; H05B33/10; H05B33/22; H10K50/00; H10K59/00
Foreign References:
JP2016149552A2016-08-18
JP2013140949A2013-07-18
JP2014197664A2014-10-16
JP2020167362A2020-10-08
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