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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/203417
Kind Code:
A1
Abstract:
Provided is a semiconductor device (10) having a transistor of a very small size. This semiconductor device has a first transistor (100) and a second transistor (200). The first transistor has a first conductive layer (112a), a first insulation layer (110) on the first conductive layer, a second insulation layer (120) on the first insulation layer, a second conductive layer (112b) on the second insulation layer, a first semiconductor layer (108), a third insulation layer (106), and a third conductive layer (104). The first insulation layer, the second insulation layer, and the second conductive layer have an opening (143) that reaches the first conductive layer. The first semiconductor layer touches the upper surface and side surfaces of the second conductive layer, the side surfaces of the first insulation layer, the second insulation layer, and the upper surface of the first conductive layer. The third insulation layer is provided on the first semiconductor layer. The third conductive layer is provided on the third insulation layer. The second transistor has: a second semiconductor layer (208) on the second insulation layer; the third insulation layer, which is on the second semiconductor layer; and a fourth conductive layer (204) having a region that overlaps the second semiconductor layer, with the third insulation layer therebetween.

Inventors:
JINTYOU MASAMI
OHNO MASAKATSU
DOBASHI MASAYOSHI
SHIMA YUKINORI
KOEZUKA JUNICHI (JP)
Application Number:
PCT/IB2023/053447
Publication Date:
October 26, 2023
Filing Date:
April 05, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G09F9/00; H01L27/088; G09F9/30; H01L21/336; H01L21/8234; H01L29/786; H05B33/02; H10K50/10; H10K59/00
Foreign References:
JP2019220516A2019-12-26
JP2018078344A2018-05-17
JP2013211537A2013-10-10
US20200161312A12020-05-21
US20160268382A12016-09-15
JP2022153051A2022-10-12
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