Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/024386
Kind Code:
A1
Abstract:
This semiconductor device 10 comprises a substrate 12 made from silicon carbide, and a first-electroconductivity-type semiconductor layer provided on a first surface 12a of the substrate 12. A high-hydrogen-concentration region 40 in which the hydrogen concentration exceeds 1015/cm3 is formed over a thickness of 1 µm or greater through hydrogen-ion exposure. At least some of the high-hydrogen-concentration region 40 is formed inside the first-electroconductivity-type semiconductor layer.
Inventors:
SAKANE HITOSHI (JP)
KATO MASASHI (JP)
HARADA SHUNTA (JP)
KATO MASASHI (JP)
HARADA SHUNTA (JP)
Application Number:
PCT/JP2023/024274
Publication Date:
February 01, 2024
Filing Date:
June 29, 2023
Export Citation:
Assignee:
SHI ATEX CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
| WO2016114057A1 | 2016-07-21 | |||
| WO2020080295A1 | 2020-04-23 | |||
| WO2016120999A1 | 2016-08-04 |
Foreign References:
| US20190165090A1 | 2019-05-30 | |||
| US20190165151A1 | 2019-05-30 | |||
| US20130277793A1 | 2013-10-24 | |||
| JP2021145111A | 2021-09-24 |
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
Download PDF:
Previous Patent: NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
Next Patent: CONTROL SYSTEM, COMMUNICATION DEVICE, AND CONTROL METHOD
Next Patent: CONTROL SYSTEM, COMMUNICATION DEVICE, AND CONTROL METHOD