Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/116910
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention is provided with: an insulating substrate (1) which is obtained by integrating a ceramic base material (1b) and a fin (1a) for cooling with each other; a plate-like wiring member (5); and a semiconductor element (3a) which has one surface bonded to the ceramic base material (1b) side of the insulating substrate (1), with a chip-bottom solder (4) being interposed therebetween, and which has the other surface bonded to a plurality of plate-like wiring members (5), with chip-top solders (6) being interposed therebetween, respectively. The chip-bottom solder (4) and the chip-top solders (6) are mainly composed of Sn, while containing from 0.3 wt% to 3 wt% (inclusive) of Ag and from 0.5 wt% to 1 wt% (inclusive) of Cu. This semiconductor device is reduced in size without deteriorating the heat dissipation properties.
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Inventors:
OGAWA SHOHEI (JP)
FUJINO JUNJI (JP)
ISHIKAWA SATORU (JP)
SHIGEMOTO TAKUMI (JP)
ISHIYAMA YUSUKE (JP)
FUJINO JUNJI (JP)
ISHIKAWA SATORU (JP)
SHIGEMOTO TAKUMI (JP)
ISHIYAMA YUSUKE (JP)
Application Number:
PCT/JP2018/043995
Publication Date:
June 20, 2019
Filing Date:
November 29, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/40; B23K1/00; B23K1/005; B23K35/26; C22C13/00; H01L21/52; H01L25/07; H01L25/18
Foreign References:
| JP6065973B2 | 2017-01-25 | |||
| JP2009021530A | 2009-01-29 | |||
| JP2007157863A | 2007-06-21 | |||
| JP2008282834A | 2008-11-20 | |||
| JP2010135783A | 2010-06-17 | |||
| JP2010238963A | 2010-10-21 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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