SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2023/189549

Kind Code:

A1

Abstract:

In this method for producing a semiconductor device, a metal oxide layer mainly composed of aluminum is formed on an insulating surface, the surface of the metal oxide layer is subjected to planarization, an oxide semiconductor layer is formed on the planarized surface, a gate insulating layer is formed on the oxide semiconductor layer, and a gate electrode is formed on the gate insulating layer so as to face the oxide semiconductor layer.

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Inventors:

TAMARU TAKAYA (JP)
TSUBUKU MASASHI (JP)
WATAKABE HAJIME (JP)
SASAKI TOSHINARI (JP)

Application Number:

PCT/JP2023/009876

Publication Date:

October 05, 2023

Filing Date:

March 14, 2023

Export Citation:

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Assignee:

JAPAN DISPLAY INC (JP)

International Classes:

H01L29/786; G09F9/00; G09F9/30; H01L21/306; H01L21/3065; H01L21/336; H05B33/02; H10K50/00; H10K59/00

Domestic Patent References:

WO2019244636A1

2019-12-26

Foreign References:

JP2013157359A	2013-08-15
JP2020027942A	2020-02-20
JP2018121049A	2018-08-02