Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/188577
Kind Code:
A1
Abstract:
Provided are a semiconductor device and a power conversion device with which the p-body layer area of a diode portion of an RC-IGBT can be reduced, hole injection can be suppressed, and the recovery characteristic can be improved. This semiconductor device 100 (RC-IGBT) has a first body layer, a second body layer 5, first trenches 13 provided between the first body layer and the second body layer, a first gate electrode 7 formed on a side wall on the first body layer side, with a gate insulation film therebetween, and a second gate electrode 16 formed on a side wall on the second body layer side, with a gate insulation film therebetween, wherein the first gate electrode and the second gate electrode are separated by at least a first insulation film 14a interposed therebetween. The diode has a third body layer and a fourth body layer 5 of a first conductivity type, and a second trench 13 provided between the third body layer and the fourth body layer, the second trench 13 has a first electrode 10 formed on a side wall on the third body layer side, with an insulation film therebetween, and a second electrode 17 formed on a side wall on the fourth body layer side, with an insulation film therebetween, and the first electrode and the second electrode are separated by at least a second insulation film 14a interposed therebetween.
Inventors:
SHIRAISHI MASAKI (JP)
Application Number:
PCT/JP2022/045870
Publication Date:
October 05, 2023
Filing Date:
December 13, 2022
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/78; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| WO2012144271A1 | 2012-10-26 |
Foreign References:
| JP2016163049A | 2016-09-05 | |||
| JP2007258363A | 2007-10-04 | |||
| JP2016119434A | 2016-06-30 | |||
| JP2019145758A | 2019-08-29 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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