SEMICONDUCTOR DEVICE, POWER MODULE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2020/025995

A1

The present invention is provided with: a semiconductor substrate (10) having electrical conductivity, comprising a first main surface (11) and a second main surface (12) which are opposed to each other, and having a groove formed in the first main surface (11); a plurality of conductive layers which are layered in a surface normal line direction of a side surface of the groove and each of which is a first conductive layer (2A) or a second conductive layer (2B); dielectric layers (30) which are disposed between a conductive layer among the plurality of conductive layers closest to the side surface of the groove, and the side surface of the groove, and which are disposed between the plurality of conductive layers; a first electrode (41) which is disposed outside the groove and which is electrically connected to the first conductive layer (2A); and a second electrode 42 which is disposed outside the groove and which is electrically connected to the second conductive layer (2B). The first conductive layer (2A) is electrically insulated from the semiconductor substrate (10). The semiconductor substrate (10) electrically connected, inside the groove, to the second conductive layer (2B) is electrically connected to the second electrode (42).

MARUI TOSHIHARU (JP)
HAYASHI TETSUYA (JP)
NUMAKURA KEIICHIRO (JP)
NI WEI (JP)
TANAKA RYOTA (JP)

PCT/IB2018/001120

February 06, 2020

August 01, 2018

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NISSAN MOTOR (JP)
RENAULT SAS (FR)

H01L21/822; H01L21/8234; H01L27/04; H01L27/06

US20040036051A1	2004-02-26
JPS60200565A	1985-10-11
US20120112349A1	2012-05-10
JP2009515353W

See also references of EP 3832709A4

MIYOSHI, Hidekazu et al. (JP)

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