Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/077803
Kind Code:
A1
Abstract:
A method for preparing a semiconductor device. The method comprises: providing a substrate, wherein the substrate is provided with a first-type well region and a second-type well region; performing first ion doping, forming a second-type source-drain region in the first-type well region, and forming a doped region in the second-type well region; forming a first mask layer, wherein the first mask layer covers the second type source-drain region and exposes the doped region; at least removing part of the doped region; performing second ion doping, forming a first-type source-drain region in the second-type well region, wherein the doping types of the first ion doping and the second ion doping are complementary; and forming a first source-drain contact and a second source-drain contact, wherein the first source-drain contact is connected to the first-type source-drain region, the second source-drain contact is connected to the second-type source-drain region, and in a direction perpendicular to a top surface of the semiconductor device, the connecting interface between the first source-drain contact and the first-type source-drain region is lower than the connecting interface between the second source-drain contact and the second-type source-drain region. The method can achieve the purpose of forming a CMOS transistor only by using one photomask, and also ensure that the performance of the CMOS transistor is not compromised.
Inventors:
HU JIANCHENG (CN)
CHO GYUSEOG (CN)
CHO GYUSEOG (CN)
Application Number:
PCT/CN2023/070660
Publication Date:
April 18, 2024
Filing Date:
January 05, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8238
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
Download PDF: