Title:
SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/041275
Kind Code:
A1
Abstract:
A semiconductor device comprising an N-type transistor including gate insulating
film (42n) superimposed on semiconductor substrate (10) and having metal oxide
film (34) consisting of an oxide of hafnium and silicon or an oxynitride of hafnium
and silicon and gate electrode (44n) superimposed on the gate insulating film
(42n) and having a polysilicon film; and a P-type transistor including gate insulating
film (42p) superimposed on the semiconductor substrate (10) and having metal
oxide film (32) consisting of an oxide of hafnium, silicon and aluminum or an oxynitride
of hafnium, silicon and aluminum and gate electrode (44p) superimposed on the
gate insulating film (42p) and having a polysilicon film.
Inventors:
YAMAGUCHI MASAOMI (JP)
MISHIMA YASUYOSHI (JP)
MISHIMA YASUYOSHI (JP)
Application Number:
PCT/JP2006/319459
Publication Date:
April 10, 2008
Filing Date:
September 29, 2006
Export Citation:
Assignee:
FUJITSU LTD (JP)
YAMAGUCHI MASAOMI (JP)
MISHIMA YASUYOSHI (JP)
YAMAGUCHI MASAOMI (JP)
MISHIMA YASUYOSHI (JP)
International Classes:
H01L21/8238; H01L21/283; H01L27/092; H01L29/423; H01L29/49; H01L29/78
Foreign References:
| JP2006108439A | 2006-04-20 | |||
| JP2006164998A | 2006-06-22 | |||
| JP2005079309A | 2005-03-24 | |||
| JP2006086511A | 2006-03-30 | |||
| JP2006093670A | 2006-04-06 |
Attorney, Agent or Firm:
KITANO, Yoshihito (9 Daikyo-ch, Shinjuku-ku Tokyo 15, JP)
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