Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/053761
Kind Code:
A1
Abstract:
The present invention makes it possible to form a flat film. The present invention involves forming a plurality of metal-containing films on a substrate by alternating: a step for forming a metal-containing film on the substrate; and a step for performing one or both of a step for supplying a processing gas to the substrate and forming a crystalline layer separation film on the surface of the metal-containing film and a step for removing abnormal growth nuclei from the surface of the metal-containing film.
Inventors:
OGAWA ARITO (JP)
KOWA KOTA (JP)
KOWA KOTA (JP)
Application Number:
PCT/JP2019/036603
Publication Date:
March 25, 2021
Filing Date:
September 18, 2019
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/285; C23C16/34; C23C16/455; H01L21/3065
Foreign References:
| JP2017521549A | 2017-08-03 | |||
| JP2015514161A | 2015-05-18 | |||
| JP2018080349A | 2018-05-24 | |||
| JP2006324363A | 2006-11-30 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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