Title:
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR, AND FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2021/172067
Kind Code:
A1
Abstract:
Provided are: a semiconductor device having a GaN layer capable of improving BI characteristics; a production method therefor; and a field effect transistor. A MISFET 100 having a GaN layer has, on a p-GaN layer 3, a gate insulation film 7 composed of a laminated structure comprising an AlN layer 5 having a thickness of 0.7-3 nm, and an Al2O3 layer 6 formed on the AlN layer 5; and a gate electrode 8. The Al2O3 layer 6 is formed through an atomic layer deposition method, using water as an oxidizer, at a temperature higher than 300°C. With the AlN layer 5 being formed between the p-GaN layer 3 and the Al2O3 layer 6, generation of an electron trap in the gate insulation film 7 is reduced, thereby improving bias instability of the MISFET 100.
Inventors:
HORIKAWA KIYOTAKA (JP)
HIRAIWA ATSUSHI (JP)
KONO SHOZO (JP)
KAWARADA HIROSHI (JP)
HIRAIWA ATSUSHI (JP)
KONO SHOZO (JP)
KAWARADA HIROSHI (JP)
Application Number:
PCT/JP2021/005484
Publication Date:
September 02, 2021
Filing Date:
February 15, 2021
Export Citation:
Assignee:
UNIV WASEDA (JP)
International Classes:
H01L21/316; H01L21/318; H01L21/336; H01L29/78
Foreign References:
| JP2006032552A | 2006-02-02 | |||
| JP2019021753A | 2019-02-07 | |||
| JP2000252458A | 2000-09-14 | |||
| JP2017059599A | 2017-03-23 |
Other References:
HIRAIWA, ATSUSHI ET AL.: "Time- dependent dielectric breakdown of atomic-layer- deposited A1203 films on GaN", JOURNAL OF APPLIED PHYSICS, vol. 123, 19 April 2018 (2018-04-19), pages 155303, XP012227873, DOI: 10.1063/1.5022338
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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