Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/116150
Kind Code:
A1
Abstract:
Provided is a semiconductor device production method having a peeling step and high yield. A metal compound layer is formed by forming a metal layer upon a substrate, supplying fluorine to the metal layer, and oxidizing same. A functional layer is formed upon the metal compound layer, the metal compound layer undergoes a heat treatment, and the metal compound layer is used to separate the functional layer and the substrate. Fluorine can be supplied to the metal layer by performing a first plasma treatment using a gas including fluorine. The metal layer having fluorine supplied thereto can be oxidized by performing a second plasma treatment using a gas including oxygen.
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Inventors:
SATO MASATAKA
KUMAKURA KAYO (JP)
YASUMOTO SEIJI (JP)
IDOJIRI SATORU (JP)
KUMAKURA KAYO (JP)
YASUMOTO SEIJI (JP)
IDOJIRI SATORU (JP)
Application Number:
PCT/IB2018/059553
Publication Date:
June 20, 2019
Filing Date:
December 03, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; B32B9/00; B32B15/04; B32B27/34; H01L21/02; H01L27/12; H01L27/32; H01L29/786; H01L51/50; H05B33/02; H05B33/10
Foreign References:
JPH02205016A | 1990-08-14 | |||
JP2007220749A | 2007-08-30 | |||
JP2013077521A | 2013-04-25 |
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