Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/163293
Kind Code:
A1
Abstract:
The objective of the invention is to prevent damage to a semiconductor device when forming a via hole for a through-electrode. This semiconductor device comprises a tubular insulation film, a front surface side pad, a conductor layer, and a back surface side pad. The tubular insulation film is formed into a tube shape passing through the semiconductor substrate. The front surface side pad is formed adjacent to the surface of the semiconductor substrate on the inner side of the tubular insulation film. After the semiconductor substrate on the inner side of the tubular insulation film adjacent to the front surface side pad has been removed, the conductor layer is disposed adjacent to the front surface side pad and the inner side of the tubular insulation film. The back surface side pad is disposed on the back surface of the semiconductor substrate and connected through the conductor layer to the front surface side pad.
Inventors:
SHIGETOSHI TAKUSHI (JP)
Application Number:
PCT/JP2018/048399
Publication Date:
August 29, 2019
Filing Date:
December 28, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/3205; H01L21/768; H01L23/522; H01L27/146
Domestic Patent References:
| WO2017038108A1 | 2017-03-09 |
Foreign References:
| JP2008251964A | 2008-10-16 | |||
| JP2005303258A | 2005-10-27 | |||
| JP2003309221A | 2003-10-31 | |||
| JP2015073134A | 2015-04-16 | |||
| JP2009181981A | 2009-08-13 | |||
| JP2002289623A | 2002-10-04 | |||
| JP2012525696A | 2012-10-22 | |||
| JP2005294577A | 2005-10-20 |
Attorney, Agent or Firm:
MATSUO Kenichiro (JP)
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