Title:
SEMICONDUCTOR DEVICE, SEMICNDUCTOR PACKAGE COMPRISING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/176833
Kind Code:
A1
Abstract:
This semiconductor device 1 comprises: a silicon substrate 2; a drift layer 4 that is arranged on the silicon substrate 2, while being composed of a gallium oxide semiconductor layer; and a buffer layer 3 that is interposed between the silicon substrate 2 and the drift layer 4. The buffer layer 3 is formed, for example, of aluminum nitride (AlN). The buffer layer 3 is formed, for example, of gallium oxide (Ga2O3).
Inventors:
SAGAWA AKIRA (JP)
Application Number:
PCT/JP2021/000113
Publication Date:
September 10, 2021
Filing Date:
January 05, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/06; H01L21/329; H01L29/41; H01L29/47; H01L29/872
Domestic Patent References:
| WO2018045175A1 | 2018-03-08 | |||
| WO2016075927A1 | 2016-05-19 |
Foreign References:
| JP2017112126A | 2017-06-22 | |||
| JP2020021829A | 2020-02-06 | |||
| JP2019179815A | 2019-10-17 | |||
| JP2012109344A | 2012-06-07 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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