Title:
SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/104173
Kind Code:
A1
Abstract:
The present disclosure relates to: a semiconductor device wherein the reliability of an organic photoelectric conversion layer is able to be improved; a solid-state imaging device; and an electronic device.
In an organic photoelectric conversion part of the present invention, an oxygen blocking layer and a stabilization layer are sequentially provided, from the top, between an organic photoelectric conversion film and an upper electrode film above the organic photoelectric conversion film, said upper electrode film being a layer wherein a metal oxide is disposed. The oxygen blocking layer is configured, for example, of a transparent inorganic fluoride that exhibits low reactivity to oxygen. The oxygen blocking layer is transparent in the visible light region, and has a thickness thicker than that of the stabilization layer. The stabilization layer is configured of an inorganic film that has a higher standard energy of formation than the oxygen blocking layer. The present disclosure is applicable, for example, to a CMOS solid-state imaging device wherein an organic film is used for a photoelectric conversion part.
Inventors:
HAYASHI TOSHIHIKO (JP)
Application Number:
PCT/JP2015/084739
Publication Date:
June 30, 2016
Filing Date:
December 11, 2015
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H01L51/42; H01L51/50; H04N5/369; H05B33/28
Foreign References:
| JP2004327414A | 2004-11-18 | |||
| JP2007067291A | 2007-03-15 | |||
| JP2010062125A | 2010-03-18 | |||
| JP2005135706A | 2005-05-26 | |||
| JP2006032714A | 2006-02-02 | |||
| JP2007250890A | 2007-09-27 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
Nishikawa 孝 (JP)
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