Title:
SEMICONDUCTOR DEVICE, SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/057410
Kind Code:
A1
Abstract:
The present invention relates to the technical field of semiconductors, and provides a semiconductor device, a semiconductor structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate; forming a first insulating layer covering the substrate, and performing patterning processing on the first insulating layer to form a plurality of through holes and a plurality of insolation structures which are alternately arranged; forming conductive contact plugs in the through holes, the conductive contact plugs covering the bottoms of the through holes, and comprising first areas and second areas which are adjacent to each other, and the conductive contact plugs in the first areas covering the external walls of the insolation structures and extending along the external walls to the surfaces of the insolation structures facing away from the substrate; and forming a passivation layer covering the sidewalls and surfaces of the conductive contact plugs. The manufacturing method of the present invention can ensure that conductive contact plugs keep good contact with a storage capacitor, and a risk of a short circuit between two adjacent conductive contact plugs is reduced.
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Inventors:
SUN ZHENGQING (CN)
JIN XING (CN)
JIN XING (CN)
Application Number:
PCT/CN2021/105525
Publication Date:
March 24, 2022
Filing Date:
July 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L23/528
Foreign References:
| US6287971B1 | 2001-09-11 | |||
| CN104051277A | 2014-09-17 | |||
| US6246085B1 | 2001-06-12 | |||
| JPH06120447A | 1994-04-28 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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