SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND

ITS METHOD OF MANUFACTURE

The present invention relates to semiconductor devices comprising a through-substrate via.

Through-substrate vias, particularly through-silicon vias, are used for electric interconnections between electric conductors that are arranged on opposite surfaces of

semiconductor wafers or substrates. The electrically

conductive material forming the electric interconnection of such a through-substrate via is usually insulated from the semiconductor material of the substrate by an insulating layer on the sidewall of the via hole. A cleft in the

insulating layer may short-circuit the electric

interconnection to the semiconductor substrate and thus cause malfunction of the device. If the electrically conductive material is only applied as a thin layer, a crack of the layer may interrupt the electric interconnection.

It is an object of the present invention to provide a semiconductor device comprising a secure through-substrate via and a method of producing such a semiconductor device.

This object is achieved with the semiconductor device

according to claim 1 and with the method of producing a semiconductor device according to claim 5. Embodiments and variants derive from the dependent claims.

The definitions as described above also apply to the

following description unless stated otherwise. The semiconductor device comprises a substrate of semiconductor material, a dielectric layer on a main surface of the substrate, a metal layer embedded in the dielectric layer, a contact area of the metal layer, a top metal on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, the

electrically conductive interconnection connecting the contact area with the top metal. The electrically conductive interconnection comprises a plurality of metallizations arranged in a plurality of via holes, and the plurality of metallizations is surrounded by an insulating layer

penetrating the substrate.

In an embodiment of the semiconductor device, the

metallizations are electrically interconnected by the top metal .

In a further embodiment the metallizations are separated from one another by the semiconductor material of the substrate. The metallizations may be in contact with the semiconductor material of the substrate.

The method of producing such a semiconductor device comprises providing a substrate of semiconductor material with a dielectric layer on a main surface and with a metal layer having a contact area embedded in the dielectric layer, etching a trench into the substrate from an opposite main surface of the substrate after the dielectric layer and the metal layer comprising the contact area are formed, the etching of the trench stopping on the dielectric layer, so that the trench reaches to the dielectric layer and

completely surrounds a region of the substrate, filling the trench with an electrically insulating material, thus forming an insulating layer, etching a plurality of via holes from the opposite main surface to the contact area within the region surrounded by the insulating layer, arranging

metallizations in the via holes, each of the metallizations contacting the contact area, and applying a top metal contacting each of the metallizations above the opposite main surface of the substrate.

In a variant of the method, after arranging the

metallizations in the via holes and before applying the top metal, remaining voids in the via holes are filled with a filling material.

In a further variant of the method, the metallizations are arranged immediately on the semiconductor material of the substrate that is exposed in the via holes.

In a further variant of the method, a further dielectric layer is arranged on the opposite main surface of the

substrate, and the top metal is applied on the further dielectric layer.

In a further variant of the method, an integrated circuit is formed in the semiconductor material of the substrate, and a plurality of metal layers is formed in the dielectric layer as a wiring of the integrated circuit, the metallizations being connected to the wiring through the contact area.

In a further variant of the method, the via holes and

metallizations are arranged on the contact area at vertices of a square grid. The following is a detailed description of examples of the semiconductor device and the method of production in

conjunction with the appended figures.

Figure 1 is a cross section of a semiconductor device

comprising a plurality of metallizations forming an interconnection through the substrate.

Figure 2 shows a pattern of the arrangement of the

metallizations.

Figure 3 shows a further pattern of the arrangement of the metallizations.

Figure 4 is a cross section according to Figure 1 for an

intermediate product of the method.

Figure 5 is a cross section according to Figure 4 for a

further intermediate product comprising via holes.

Figure 1 is a cross section of a semiconductor device with an electric interconnection through the substrate. The substrate 1 comprises semiconductor material, especially silicon, for instance. A dielectric layer 2 is applied on a main surface 10 of the substrate 1. A metal layer 3 with a contact area 4 is embedded in the dielectric layer 2. The metal layer 3 may especially be one layer of a plurality of metal layers 13, which can be structured and connected by vertical

interconnections 14 to form a wiring for an integrated circuit 19 in the substrate 1, in particular a CMOS circuit, for instance. The dielectric layer 3 may be covered by a passivation layer 15. A top metal 5 is applied above the opposite main surface 11 of the substrate 1. The top metal 5 can be insulated from the semiconductor material by a further dielectric layer 12. The top metal 5 and the optional further dielectric layer 12 may be covered by a further passivation layer 16.

An electric interconnection 6 through the substrate is formed on the contact area 4. The interconnection 6 comprises a plurality of via holes 17 in the substrate 1 and

metallizations 7, which are arranged in the via holes 17 in electric contact with the contact area 4. An insulating layer 8, which penetrates the substrate 1, surrounds a region including the interconnection 6 and insulates the plurality of metallizations 7 from a portion of the substrate 1 that is outside the surrounded region. The individual metallizations 7 may be separated from one another by semiconductor material of the substrate 1 inside the surrounded region. The

insulating layer 8 can be formed by a trench 18 in the semiconductor material of the substrate 1. The trench 18 may be cylindrical, for instance. A dielectric material in the trench 18 provides the electric insulation. A filling

material 9 may fill remaining voids in the via holes 17.

Figure 1 shows that the insulating layer 8 can be arranged spatially separated from the individual metallizations 7, which form the electrically conductive part of the

interconnection 6 through the substrate. This is different from conventional through-substrate vias, wherein the

electric conductor of the electric interconnection through the substrate is applied immediately on an insulating layer or an insulating region at the sidewall of a via hole.

Furthermore, the arrangement of the via holes 17 and the trench 18 shown in Figure 1 allows to provide the interconnection 6 with more than one individual metallization 7, so that a plurality of electric conductors can contribute to the interconnection 6 instead of only a single conductor.

Figure 2 shows a pattern of the arrangement of the

metallizations in the top view that is indicated in Figure 1 by the horizontal broken line and arrows. In the example shown in Figure 2, each of the metallizations 7 has the shape of a right circular hollow cylinder. The axes of the

metallizations 7 are arranged at vertices of a square grid. The metallizations 7 may instead have other shapes, and their arrangement can differ from the examples shown in the

appended figures. The arrangement of the metallizations 7 may especially be irregular. The metallizations 7 may completely fill the via holes 17, or remaining voids may be filled with the filling material 9 shown in Figure 2.

Figure 2 shows that the insulating layer 8, which is also a right circular hollow cylinder in this example, surrounds a cylindrical region of the substrate 1 where the plurality of metallizations 7 is arranged. The individual metallizations 7 are separated from one another by semiconductor material of the substrate 1 inside the surrounded region. The horizontal broken line and arrows in Figure 2 indicate the position of the cross section shown in Figure 1.

Figure 3 shows a further pattern of the arrangement of the metallizations in the top view that is indicated in Figure 1 by the horizontal broken line and arrows. In the example shown in Figure 3, the metallizations 7 are also cylindrical and arranged at vertices of a square grid. The metallizations 7 may completely fill the via holes 17, or remaining voids may be filled with a filling material 9. Figure 3 shows that, in this example, the insulating layer 8 comprises flat sections connected by rounded edges in a framelike fashion. It surrounds the region of the substrate 1 where the plurality of metallizations 7 is arranged. The individual metallizations 7 are separated from one another by semiconductor material of the substrate 1 inside the

surrounded region. The horizontal broken line and arrows in Figure 3 indicate the position of the cross section shown in Figure 1.

Figure 4 is a cross section according to Figure 1 for an intermediate product of the method. Elements corresponding to elements shown in Figure 1 are indicated with the same reference numerals. Figure 4 shows the substrate 1, the dielectric layer 2 on the main surface 10, the metal layer 3 of the plurality of metal layers 13 embedded in the

dielectric layer 2, the contact area 4, the vertical

interconnections 14, and the passivation layer 15. A trench 18, which surrounds a region of the substrate 1 opposite the contact area 4, is etched into the substrate 1 from the opposite main surface 11. The trench 18 penetrates the substrate 1 and reaches the dielectric layer 2. The etching of the trench 18 stops on the dielectric layer 2.

Figure 5 is a cross section according to Figure 4 for a further intermediate product of the method. Elements

corresponding to elements shown in Figure 4 are indicated with the same reference numerals. The trench 18 is filled with dielectric material, which may be an oxide of the semiconductor material, for instance, to form the insulating layer 8. The dielectric material can also be used to form the further dielectric layer 12 on the opposite main surface 11 of the substrate 1. Then the via holes 17 are etched into the substrate 1 until the contact area 4 is exposed in the via holes 17.

The metallizations 7 are arranged in the via holes 17 to form a plurality of electric contacts on the contact area 4. The top metal 5 can be formed in the same method step together with the metallizations 7, or it may be applied as a further metal layer, which is electrically connected to the

metallizations 7. The remaining voids of the via holes 17 are optionally filled with a filling material 9, especially if the top metal 5 is provided as a separate metal layer continuously covering the interconnection 6. The further layers shown in Figure 1 are applied, and thus the device according to Figure 1 is obtained.

The described structure of the through-substrate via has the advantages that the insulating layer surrounding the

plurality of metallizations provides a secure electric insulation from the outer portion of the semiconductor substrate and that cracks of individual metallizations will not entirely interrupt the electric interconnection through the substrate. Moreover, the electrical conductivity of the interconnection is enhanced by the use of a plurality of metallizations.

List of reference numerals

1 substrate

2 dielectric layer

3 metal layer

4 contact area

5 top metal

6 interconnection through the substrate 7 metallization

8 insulating layer

9 filling material

10 main surface

11 opposite main surface

12 further dielectric layer

13 plurality of metal layers

14 vertical interconnection

15 passivation layer

16 further passivation layer

17 via hole

18 trench

19 integrated circuit