Title:
SEMICONDUCTOR DEVICE AND WORKING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/197213
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of semiconductors, provide a semiconductor device and a working method therefor, and an electronic device, for use in improving the performance of the semiconductor device. The semiconductor device can be used as a radio frequency device and can also be used as a power device. The semiconductor device comprises: a substrate; a channel layer and a barrier layer which are sequentially stacked on the substrate; and a gate, a source, a drain, and a first hole injection layer which are provided on the side of the barrier layer distant from the substrate. The gate is located between the source and the drain; and part of the bottom surface of the gate covers the top surface of the first hole injection layer, and part of the bottom surface of the gate forms a Schottky contact with the barrier layer. Current collapse and static current drop can be suppressed by the semiconductor device.
Inventors:
LU WEI (CN)
MA JUNCAI (CN)
MA JUNCAI (CN)
Application Number:
PCT/CN2022/086659
Publication Date:
October 19, 2023
Filing Date:
April 13, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/06
Foreign References:
| CN112531020A | 2021-03-19 | |||
| CN113224156A | 2021-08-06 | |||
| CN111527610A | 2020-08-11 | |||
| CN111081772A | 2020-04-28 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
Download PDF: