Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2000/036659
Kind Code:
A1
Abstract:
A sensor (1) produces the output that changes linearly with absolute temperature. In response to the output, a reference voltage generator (13) produces reference voltages (Vhigh, Vlow) that change linearly with absolute temperature. A Schmidt trigger (14) compares the output signal from a sensor signal amplifier (12) with the reference voltages and produces output. The sensor signal amplifier (12) with a temperature-independent amplification factor amplifies the output signal from the sensor (1) while performing offset compensation. The sensor signal processing circuit (2) is formed of thin-film silicon deposited on an insulating substrate. The output from the sensor (1) undergoes accurate temperature compensation over a wide temperature range, resulting in reliable operation at high temperature.
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Inventors:
NAGANO SHUICHI (JP)
FIEDLER HORST-LOTHAR (DE)
FIEDLER HORST-LOTHAR (DE)
Application Number:
PCT/JP1999/006992
Publication Date:
June 22, 2000
Filing Date:
December 13, 1999
Export Citation:
Assignee:
ASAHI CHEMICAL IND (JP)
FRAUNHOFER GES FORSCHUNG (DE)
NAGANO SHUICHI (JP)
FIEDLER HORST LOTHAR (DE)
FRAUNHOFER GES FORSCHUNG (DE)
NAGANO SHUICHI (JP)
FIEDLER HORST LOTHAR (DE)
International Classes:
G01D3/02; G01K7/21; G01P21/02; (IPC1-7): H01L43/06; G01D5/245; G01P3/488; G01R33/07; G01L9/04; H01L27/12; H01L29/84
Domestic Patent References:
| WO1996002849A1 | 1996-02-01 |
Other References:
See also references of EP 1143536A4
Attorney, Agent or Firm:
Mori, Tetsuya (7 Kanda-kajicho 3-chome Chiyoda-ku, Tokyo, JP)
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