SEMICONDUCTOR DEVICE - JAPAN SCIENCE & TECH CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2000/059039

Kind Code:

A1

Abstract:

A high quality thin film comparable to a bulk single crystal, and a semiconductor device with superior characteristics. A channel layer (11) is formed of a semiconductor, such as zinc oxide ZnO. The channel layer (11) is provided with a source (12), a drain (13), a gate (14) and a gate insulation layer (15), thus forming a FET. As for a substrate 16, a suitable one is selected according to the thin film material of the channel layer (11) and in consideration of compatibility between the lattice constants of the two materials. For example, if the base of the semiconductor of the channel layer is ZnO, then ScAlMgO¿4? or the like may be used for the substrate (16).

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Inventors:

KAWASAKI MASASHI (JP)
OHNO HIDEO (JP)
OHTOMO AKIRA (JP)

Application Number:

PCT/JP2000/001736

Publication Date:

October 05, 2000

Filing Date:

March 22, 2000

Export Citation:

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Assignee:

JAPAN SCIENCE & TECH CORP (JP)
KAWASAKI MASASHI (JP)
OHNO HIDEO (JP)
OHTOMO AKIRA (JP)

International Classes:

C01G1/02; H01L21/338; H01L21/36; H01L27/15; H01L29/12; H01L29/22; H01L29/786; H01L29/812; H01L33/06; H01L33/10; H01L33/12; H01L33/20; H01L33/28; H01L33/32; H01L33/40; H01L33/46; H01S5/32; H01S5/347; (IPC1-7): H01L29/12; C01G51/00; C01G45/00; C01G9/00

Foreign References:

EP0863555A2	1998-09-09
US5530267A	1996-06-25

Other References:

KIMIZUKA, N. & MOHRI, T.: "Structual Classification of RAQ3(MO)n Compounds(R=Sc,In, Yor Lanthanides; A=Fe(III), Ga, Cr, or A1; M=D ivalent Cation; n=1-11", JOURNAL OF SOLID-STATE CHEMISTRY, vol. 78, 1989, pages 98 - 107, XP002929036
KIMIZUKA, N. ET. AL.: "Homologous Compounds, InFeO3(ZnO)m(m=1-9)", JOURNAL OF SOLID-STATE CHEMISTRY, vol. 74, 1989, pages 98 - 109, XP002929037
KOIKE, J. ET. AL.: "Quasi-Microwave Band Longitudinally Coupled Surface Acoustic Wave Resonator Filters Using ZnO/Sapphire Substrate", JPN. J. APPL. PHYS. PART 1, vol. 34, no. 5B, 1995, pages 2678 - 2682, XP002929038
OHTOMO A. ET. AL.: "Single Crystalline ZnO Films Grown on Lattice-matched ScA1MgO4(0001) Substrates", APPL. PHYS. LETT., vol. 75, no. 17, 1999, pages 2635 - 2637, XP002929039
See also references of EP 1172858A4

Attorney, Agent or Firm:

Hashizume, Takeshi (Ginza 4-chome Chuo-ku, Tokyo, JP)

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