Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/125022
Kind Code:
A1
Abstract:
Though copper and nickel are electrode materials often used in power semiconductor modules and the like, there have been the problems wherein highly reliable bonding performance with respect to the copper electrodes and the nickel electrodes of the power semiconductor modules and the like has not been ensured. In the present invention, electrodes of semiconductor elements and wiring, said electrodes being formed of copper or nickel, are bonded using a bonding material having copper oxide particles as a main agent, and a high-density bonding layer composed of copper is formed on the bonding interface between the electrode and the copper particles by heating and pressurizing the copper particles obtained by reducing the copper oxide in the bonding material. Consequently, bonding reliability of a bonding section can be ensured for a long period of time.
Inventors:
MORITA TOSHIAKI (JP)
YASUDA YUSUKE (JP)
YASUDA YUSUKE (JP)
Application Number:
PCT/JP2012/054525
Publication Date:
August 29, 2013
Filing Date:
February 24, 2012
Export Citation:
Assignee:
HITACHI LTD (JP)
MORITA TOSHIAKI (JP)
YASUDA YUSUKE (JP)
MORITA TOSHIAKI (JP)
YASUDA YUSUKE (JP)
International Classes:
H01L21/60; B23K20/00; B23K20/10
Foreign References:
| JP2010010502A | 2010-01-14 | |||
| JP2004071467A | 2004-03-04 |
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
Polaire Intellectual Property Corporation (JP)
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