Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/033851
Kind Code:
A1
Abstract:
In a nonvolatile memory device (4) equipped in a semiconductor device, when erasing data by using a band-to-band tunneling method, the supply of a boosted voltage to a memory cell (MC) to be erased is terminated if, in addition to the condition that the output voltage (VUCP) of a charge pump circuit (52) has recovered to a predetermined criterion voltage, another condition is satisfied that a predetermined criterion time has elapsed from the start of supply of the boosted voltage (VUCP) to the memory cell (MC) to be erased.
Inventors:
OGAWA TOMOYA (JP)
ITO TAKASHI (JP)
TOMOEDA MITSUHIRO (JP)
ITO TAKASHI (JP)
TOMOEDA MITSUHIRO (JP)
Application Number:
PCT/JP2012/071822
Publication Date:
March 06, 2014
Filing Date:
August 29, 2012
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP (JP)
OGAWA TOMOYA (JP)
ITO TAKASHI (JP)
TOMOEDA MITSUHIRO (JP)
OGAWA TOMOYA (JP)
ITO TAKASHI (JP)
TOMOEDA MITSUHIRO (JP)
International Classes:
G11C16/06; G11C16/02
Foreign References:
| JP2008276925A | 2008-11-13 | |||
| JPH11260073A | 1999-09-24 | |||
| JP2001035173A | 2001-02-09 | |||
| JP2006351166A | 2006-12-28 |
Other References:
See also references of EP 2892054A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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