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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/008444
Kind Code:
A1
Abstract:
This semiconductor device comprises the following: a silicon substrate that has a high-concentration layer containing a first-conductivity-type impurity; a low-concentration layer that is formed on top of the high-concentration layer and contains a first-conductivity-type impurity; a first electrode and a second electrode both formed on top of the low-concentration layer; a vertical semiconductor element that causes current to flow between the second electrode and the high-concentration layer; and a first trench section that electrically connects the first electrode and the high-concentration layer to each other. The first trench section comprises the following: first polysilicon containing a first-conductivity-type impurity; and a diffusion layer that contains a first-conductivity-type impurity and, in a planar view, surrounds the first polysilicon. The first polysilicon is formed so as to penetrate the low-concentration layer and reach the high-concentration layer, and the concentration of the first-conductivity-type impurity in the first polysilicon and the diffusion layer is constant in the direction from the low-concentration layer to the high-concentration layer.

Inventors:
YAMASHITA KATSUSHIGE
NISHIMURA KENICHI
YAMAMOTO ATSUYA
AOKI SHIGETAKA
Application Number:
PCT/JP2014/003528
Publication Date:
January 22, 2015
Filing Date:
July 02, 2014
Export Citation:
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L21/28; H01L29/78; H01L21/329; H01L21/331; H01L21/336; H01L29/41; H01L29/417; H01L29/423; H01L29/47; H01L29/49; H01L29/73; H01L29/732; H01L29/861; H01L29/868; H01L29/872
Foreign References:
US20120007216A12012-01-12
US20070018195A12007-01-25
JPH05166823A1993-07-02
JP2013125827A2013-06-24
JPH04269835A1992-09-25
JPH02244634A1990-09-28
JP2006066788A2006-03-09
JP2009164584A2009-07-23
JP2008034572A2008-02-14
JPH0529603A1993-02-05
Other References:
See also references of EP 3024035A4
Attorney, Agent or Firm:
FUJII, Kentaro et al. (JP)
Fujii Kentaro (JP)
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