Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/141212
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device having a super-junction (SJ) structure, for which output capacity loss is reduced and an increase in recovery noise and surge voltage is also suppressed. A first conductivity type region (6) forming a non-depleted layer region when the voltage between a first electrode (13) and a second electrode (12) is zero is provided to at least either a second conductivity type column region (3) or to a semiconductor layer (4) located above the second conductivity type column region (3). The semiconductor device is configured such that when the voltage between the first electrode (13) and the second electrode (12) is a prescribed voltage, a depleted layer (14), which is formed on the boundary between the first conductivity type column region (2) and the second conductivity type column region (3) and a second conductivity type layer (4), and a depleted layer (14), which is formed between the first conductivity type region (6) and the boundary of the region in which the first conductivity type region (6) is formed, are linked to each other.
Inventors:
KAGATA YUMA (JP)
AKAGI NOZOMU (JP)
AKAGI NOZOMU (JP)
Application Number:
PCT/JP2015/001440
Publication Date:
September 24, 2015
Filing Date:
March 16, 2015
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| JP2006261562A | 2006-09-28 | |||
| JP2009200300A | 2009-09-03 |
Attorney, Agent or Firm:
KIN, Junhi (JP)
Gold Junki (JP)
Gold Junki (JP)
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