SEMICONDUCTOR DEVICE - NGK INSULATORS LTD

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2015/145913

Kind Code:

A1

Abstract:

The present invention relates to a semiconductor device. This semiconductor device has an n-type semiconductor region (12), an n-type source region (14), an n-type drain region (16), and a plurality of p-type embedded gate regions (18). Furthermore, the semiconductor device has a super junction structure (38). The super junction structure (38) is configured from: a plurality of p-type first regions (36p), each of which extends from each of the embedded gate regions (18) toward the drain region (16); and n-type second regions (36n) that are present among the first regions (36p). Furthermore, each of the embedded gate regions (18) has a configuration wherein each of the embedded gate regions is connected to an upper portion of each of the first regions (36p).

Inventors:

SHIMIZU NAOHIRO (JP)
YANO KOJI (JP)

Application Number:

PCT/JP2014/084600

Publication Date:

October 01, 2015

Filing Date:

December 26, 2014

Export Citation:

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Assignee:

NGK INSULATORS LTD (JP)
UNIV YAMANASHI (JP)

International Classes:

H01L21/337; H01L21/338; H01L29/808; H01L29/812

Domestic Patent References:

WO2011108768A1

2011-09-09

Foreign References:

JP2010045218A	2010-02-25
JP2005005385A	2005-01-06
JP2001196605A	2001-07-19
JP2012004173A	2012-01-05
JP3284120B2	2002-05-20
JP2010045218A	2010-02-25
JP4832723B2	2011-12-07

Other References: