Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/051464
Kind Code:
A1
Abstract:
The art disclosed in the present description makes it possible to, by adjusting the level of conductivity modulation, suppress partial concentration of carriers when recovery operations are performed. This semiconductor device is provided with: a first conductivity-type semiconductor layer (101); first conductivity-type first impurity layers (10, 10a-10g), which are formed by partial diffusion in the rear surface of the semiconductor layer, and which have an impurity concentration that is higher than that of the semiconductor layer; and a plurality of second conductivity-type second impurity layers (12, 13) formed by partial diffusion in the front surface of the semiconductor layer. The first impurity layers are formed at, in plan view, positions between the second impurity layers, said positions not overlapping the second impurity layers, and between the second impurity layers in the front surface of the semiconductor layer, only the semiconductor layer is present.
Inventors:
FUJII HIDENORI (JP)
Application Number:
PCT/JP2015/077018
Publication Date:
March 30, 2017
Filing Date:
September 25, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/861; H01L29/868
Foreign References:
| JPH0629558A | 1994-02-04 | |||
| JPH0191475A | 1989-04-11 | |||
| JPH07106605A | 1995-04-21 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Download PDF: