Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/096722
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a silicon carbide epitaxial layer which is formed on one main surface of a single crystal silicon carbide substrate; a recess and a projection, which are formed in the surface of the silicon carbide epitaxial layer; an inclined surface which is formed between the recess and the projection; a first contact region of a first conductivity type, which is formed in the inclined surface-side bottom surface of the recess, and a second contact region of a second conductivity type, which is in contact with the first contact region; a drift region of the first conductivity type, which is formed in the upper surface of the projection; a body region of the second conductivity type, which is formed in the inclined surface between the first contact region and the drift region; a gate insulating film which covers the inclined surface; a gate electrode; a source electrode; and a drain electrode. The angle of the inclined surface to the one main surface of the single crystal silicon carbide substrate is from 40° to 70° (inclusive).
Inventors:
TSUNO TAKASHI (JP)
Application Number:
PCT/JP2017/024054
Publication Date:
May 31, 2018
Filing Date:
June 29, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/28; H01L29/78; H01L21/336; H01L29/12; H01L29/41; H01L29/423; H01L29/49
Domestic Patent References:
| WO2015056318A1 | 2015-04-23 |
Foreign References:
| JP2016143788A | 2016-08-08 | |||
| JP2015153854A | 2015-08-24 | |||
| JP2016195225A | 2016-11-17 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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