Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/198575
Kind Code:
A1
Abstract:
A plurality of trench gate structures having gate electrodes (16a, 16b) are formed in a semiconductor substrate (10) having a drift layer (11), base layer (12), CS layer (13), and collector layer (22), and the gate electrodes (16a, 16b) have first gate electrodes (16a), to which a predetermined gate voltage is applied, and second gate electrodes (16b) that are electrically connected to a first electrode (20). Furthermore, the first gate electrodes (16a) are disposed such that at least parts of respective first gate electrodes are adjacent to each other, and the CS layer (13) is disposed at least between the adjacent first and second gate electrodes (16a, 16b). A region between the adjacent first gate electrodes (16a) has a region wherein a first conductivity-type impurity concentration is set lower than that of the CS layer (13) formed between the adjacent first and second gate electrodes (16a, 16b) so that a second carrier supplied from a second electrode (23) can easily pass when a current flows.
Inventors:
SUMITOMO MASAKIYO (JP)
Application Number:
PCT/JP2018/010274
Publication Date:
November 01, 2018
Filing Date:
March 15, 2018
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L29/739
Foreign References:
| JP2016184712A | 2016-10-20 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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