Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/098122
Kind Code:
A1
Abstract:
Provided is a semiconductor device in which an IGBT region (3) having an IGBT element (3a) and an FWD region (4) having an FWD element (4a) are formed on a common semiconductor substrate (10), wherein a plurality of carrier injection layers (24) that are electrically connected to a second electrode (23) and constitute a PN junction with a field stop layer (20), are formed in a cathode layer (22). Furthermore, when an impurity concentration of the field stop layer (22) is considered to be Nfs [cm-3], and the length, along the planar direction of the semiconductor substrate (10), of the shortest portion of a carrier injection layer (24) is considered to be L1 [μm], the plurality of carrier injection layers (24) are set such that L1>6.8×10-16×Nfs+20 holds true.
Inventors:
MURAKAWA KOICHI (JP)
TAKAHASHI SHIGEKI (JP)
SUMITOMO MASAKIYO (JP)
TAKAHASHI SHIGEKI (JP)
SUMITOMO MASAKIYO (JP)
Application Number:
PCT/JP2018/041544
Publication Date:
May 23, 2019
Filing Date:
November 08, 2018
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/739; H01L21/8234; H01L27/06; H01L27/088; H01L29/78
Domestic Patent References:
| WO2016114131A1 | 2016-07-21 |
Foreign References:
| JP2017022381A | 2017-01-26 | |||
| JP2015156489A | 2015-08-27 | |||
| JP2012033897A | 2012-02-16 | |||
| JP2010171358A | 2010-08-05 | |||
| JP2012069579A | 2012-04-05 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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