Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/180539
Kind Code:
A1
Abstract:
[Abstract] Provided is a semiconductor device having excellent electrical characteristics. Provided is the semiconductor device for which the electrical characteristics are stable. Provided is a semiconductor device with high reliability. The semiconductor device has a semiconductor layer, a first insulating layer, a second insulating layer, and an electrically conductive layer. The first insulating layer contacts a portion of the top surface of the semiconductor layer, the electrically conductive layer is positioned on the first insulating layer, and the second insulating layer is positioned on the semiconductor layer. The semiconductor layer contains a metal oxide, and has a first region that overlaps the electrically conductive layer, and a second region that does not overlap the electrically conductive layer. Also, the second region contacts the second insulating layer, the second insulating layer contains oxygen and a first element, and the first element is one or more of phosphorous, boron, magnesium, aluminum, or silicon.
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Inventors:
KOEZUKA JUNICHI (JP)
NAKAZAWA YASUTAKA
NAKAZAWA YASUTAKA
Application Number:
PCT/IB2019/051968
Publication Date:
September 26, 2019
Filing Date:
March 12, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; G09F9/30; H01L21/8239; H01L21/8242; H01L27/105; H01L27/108; H01L27/1156; H01L29/786
Foreign References:
| JP2015144266A | 2015-08-06 | |||
| JP2011077515A | 2011-04-14 | |||
| JP2008270637A | 2008-11-06 | |||
| JP2004247414A | 2004-09-02 | |||
| JP2018006728A | 2018-01-11 |
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