Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/065512
Kind Code:
A1
Abstract:
The present invention addresses the problem of achieving a semiconductor device which is capable of forming an active region by being stacked with a lead zirconate titanate (PZT (PbZrTiO3)) sensor that has a piezoelectric effect. To this end, the present invention adopts the following configuration. A semiconductor device which comprises a lead zirconate titanate (PZT (PbZrTiO3)) sensor, and which is characterized in that: the PZT sensor comprises a lower electrode (101) that is formed on a glass substrate (100), a PZT (102), an upper electrode (103), a first inorganic insulating film (104) that covers the upper electrode, and an upper wiring line (105) that is formed on the first inorganic insulating film (104) and is connected to the upper electrode (103) via a first through hole (130) that is formed in the inorganic insulating film (104); a polyimide film (106) is formed so as to cover the PZT sensor; an active region is formed on the polyimide film (106); and the polyimide film (106) has a thickness of 5 μm or more.
Inventors:
ITOGA TOSHIHIKO (JP)
KAITOH TAKUO (JP)
KAITOH TAKUO (JP)
Application Number:
PCT/JP2020/035085
Publication Date:
April 08, 2021
Filing Date:
September 16, 2020
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
G09F9/30; G02F1/1333; G02F1/1368; G06F3/041; G06F3/043; H01L27/32; H01L41/107; H01L41/187; H01L51/50; H05B33/02
Foreign References:
JP2018077983A | 2018-05-17 | |||
JP2018073958A | 2018-05-10 | |||
JP2018063669A | 2018-04-19 | |||
JP2017109268A | 2017-06-22 | |||
US20180224992A1 | 2018-08-09 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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