Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/065002
Kind Code:
A1
Abstract:
This semiconductor device comprises: a semiconductor substrate which has a main surface; a semiconductor layer which is formed on the main surface of the semiconductor substrate, and which comprises a low concentration layer of a first conductivity type, said low concentration layer being in contact with the main surface of the semiconductor substrate, and a high concentration layer of the first conductivity type, said high concentration layer having a higher impurity concentration than the low concentration layer, while being formed on a surface layer part of a surface of the semiconductor layer, said surface being on the reverse side from the main surface; and a Schottky electrode which is formed on the surface of the semiconductor layer, and which forms a Schottky junction part with the high concentration layer.
Inventors:
UENO MASAYA (JP)
Application Number:
PCT/JP2021/032533
Publication Date:
March 31, 2022
Filing Date:
September 03, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/265; H01L29/06; H01L29/47; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| WO2018139557A1 | 2018-08-02 |
Foreign References:
| JP2006295062A | 2006-10-26 | |||
| JP2016009794A | 2016-01-18 | |||
| JPH07254718A | 1995-10-03 | |||
| JP2005167149A | 2005-06-23 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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