Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/107727
Kind Code:
A1
Abstract:
A semiconductor device which is provided with: a buffer region where the doping concentration is higher than the bulk donor concentration; a first low-concentration hydrogen peak that is arranged in the buffer region; a second low-concentration hydrogen peak that is arranged in the buffer region at a position closer to the lower surface than the first low-concentration hydrogen peak; a high-concentration hydrogen peak that is arranged in the buffer region at a position closer to the lower surface than the second low-concentration hydrogen peak, while having a higher hydrogen chemical concentration than the second low-concentration hydrogen peak; a region between the first low-concentration hydrogen peak and the second low-concentration hydrogen peak; and a flat region which contains the region where the second low-concentration hydrogen peak is provided, wherein the doping concentration is higher than the bulk donor concentration and the average doping concentration is not more than the minimum value of the doping concentration between the second low-concentration hydrogen peak and the high-concentration hydrogen peak.
Inventors:
UCHIDA MISAKI (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
YAGUCHI SHUNTARO (JP)
NOGUCHI SEIJI (JP)
SAKURAI YOSUKE (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
YAGUCHI SHUNTARO (JP)
NOGUCHI SEIJI (JP)
SAKURAI YOSUKE (JP)
Application Number:
PCT/JP2021/041952
Publication Date:
May 27, 2022
Filing Date:
November 15, 2021
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/06; H01L29/739; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2020100997A1 | 2020-05-22 | |||
| WO2020138218A1 | 2020-07-02 |
Foreign References:
| JP2018195757A | 2018-12-06 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Download PDF: