Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/124042
Kind Code:
A1
Abstract:
Provided is a semiconductor device which is easy to manufacture, and in which an electric field applied to an electric field protection layer provided to a trench gate electrode in the end portion of an active region is relaxed and the avalanche withstand voltage is improved. A semiconductor device (10) according to the present invention is provided with: an active region (1) that has a plurality of gate trenches (41), a trench gate electrode (40) provided in each gate trench (41), and a P body layer (8) provided to a section other than the gate trenches (41); and a termination region (2) that is disposed on the outer periphery of the active region (1). The semiconductor device is characterized in that an electric field protection layer (5) is provided to the bottom of each gate trench (41) of the active region (1), an electric field relaxation layer (3) is provided between the active region (1) and the termination region (2), the bottom surface of the electric field relaxation layer (3) is shallower than the bottom surface of the electric field protection layer (5), and the electric field relaxation layer is electrically connected to the P body layer (8).
Inventors:
KINOSHITA KOYO (JP)
MORIKAWA TAKAHIRO (JP)
MURATA TATSUNORI (JP)
YASUI KAN (JP)
MORIKAWA TAKAHIRO (JP)
MURATA TATSUNORI (JP)
YASUI KAN (JP)
Application Number:
PCT/JP2021/042454
Publication Date:
June 16, 2022
Filing Date:
November 18, 2021
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/78; H01L29/06
Foreign References:
| JP2017092364A | 2017-05-25 | |||
| JP2018133442A | 2018-08-23 | |||
| JP2015126086A | 2015-07-06 | |||
| JP2020113633A | 2020-07-27 | |||
| JP2013258369A | 2013-12-26 | |||
| JP2006128507A | 2006-05-18 | |||
| JP2016115692A | 2016-06-23 | |||
| JPH1070271A | 1998-03-10 | |||
| JP2018067651A | 2018-04-26 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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