Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/210255
Kind Code:
A1
Abstract:
This semiconductor device has: a silicon carbide substrate comprising a first main surface; an electrode on the first main surface; and a connecting member connected to the electrode. The first main surface is at an angle with respect to (0001). The planar shape of the electrode in planar view from a direction perpendicular to the first main surface is a rectangle or a rounded rectangle with a first edge and second edge parallel to [1-100] of the silicon carbide substrate, the first edge being on the [-1-120] side with respect to the second edge, and the second edge being on the [11-20] side with respect to the first edge. Where a first distance is the shortest distance between the first edge and a contact region in which the connecting member makes contact with the electrode, and a second distance is the shortest distance between the second edge and the contact region, the first distance is larger than the second distance.
Inventors:
HIYOSHI TORU (JP)
KANEDA TATSUSHI (JP)
OOMORI HIROTAKA (JP)
KANEDA TATSUSHI (JP)
OOMORI HIROTAKA (JP)
Application Number:
PCT/JP2022/013930
Publication Date:
October 06, 2022
Filing Date:
March 24, 2022
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L25/07; H01L21/60; H01L25/18; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| WO2015060441A1 | 2015-04-30 |
Foreign References:
| JP2007081144A | 2007-03-29 | |||
| JP2016208030A | 2016-12-08 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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