Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/254596
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a substrate (101); a buffer layer (102) that is formed on the substrate (101); a first semiconductor layer (103) that is formed on the buffer layer (102); a second semiconductor layer (104) that is formed on the first semiconductor layer (103); and a channel layer (105) and a barrier layer (106), which are formed on the second semiconductor layer. The substrate (101) is configured from a nitride semiconductor that has been doped with an impurity so as to have semi-insulating properties or a high resistance; the buffer layer (102) is configured from GaN; the first semiconductor layer (103) is configured from GaN that has been doped with an acceptor; and the second semiconductor layer (104) is configured from AlGaN.
Inventors:
YOSHIYA YUKI (JP)
HOSHI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
MATSUZAKI HIDEAKI (JP)
HOSHI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
MATSUZAKI HIDEAKI (JP)
Application Number:
PCT/JP2021/020936
Publication Date:
December 08, 2022
Filing Date:
June 02, 2021
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L29/778; H01L21/338; H01L29/812
Domestic Patent References:
| WO2017077805A1 | 2017-05-11 |
Foreign References:
| JP2016134564A | 2016-07-25 | |||
| JP2014049674A | 2014-03-17 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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