Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/002617
Kind Code:
A1
Abstract:
This semiconductor device improves light reception sensitivity of a solid-state imaging element. A semiconductor device (100) comprises a semiconductor substrate (1) and a pixel circuit (10) formed on the semiconductor substrate. The pixel circuit includes: a first semiconductor region (2) that is of a first conductive type and that is formed on the semiconductor substrate; a second semiconductor region (3) that is of a second conductive type, that is formed in the first semiconductor region, and that constitutes a photodiode together with the first semiconductor region; a plurality of wiring layers (12, 13, 14) formed on the semiconductor substrate; an insulating layer (15) covering the wiring layers; and a microlens (16) formed on the insulating layer so as to cover the photodiode in a plan view. The plurality of wiring layers respectively have opening parts (12a, 13a, 14a) in regions overlapping the photodiode in a plan view. The plurality of opening parts are formed so that opening ranges (S12, S13, S14) become larger as the opening parts are separated further away from the semiconductor substrate in the lamination direction of the wiring layers.
Inventors:
HARAGUCHI YOSHIZUMI (JP)
Application Number:
PCT/JP2021/027369
Publication Date:
January 26, 2023
Filing Date:
July 21, 2021
Export Citation:
Assignee:
TOKYO ELECTRIC POWER CO HOLDINGS INC (JP)
International Classes:
H01L27/146
Foreign References:
| JP2014140020A | 2014-07-31 | |||
| JP2011151126A | 2011-08-04 | |||
| JP2012209913A | 2012-10-25 | |||
| JP2009064924A | 2009-03-26 |
Attorney, Agent or Firm:
EINSEL Felix-Reinhard et al. (JP)
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