Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/037847
Kind Code:
A1
Abstract:
A semiconductor device (1A) includes a chip (2) that has a principal surface (3), a first-conduction-type drain region (17) that is formed at a top layer part of the principal surface, a first-conduction-type source region (22) that is formed at the top layer part of the principal surface in a different region from the drain region, a second-conduction-type back gate region (25) that is formed at the top layer part of the principal surface in a different region from the drain region and the source region so as to be electrically isolated from the drain region and the source region, a gate insulation film (36) that is formed on the principal surface over the source region, and a gate electrode (37) that is formed on the gate insulation film.
Inventors:
TERADA CHIKARA (JP)
FUJIE SHUSAKU (JP)
FUJIE SHUSAKU (JP)
Application Number:
PCT/JP2022/031398
Publication Date:
March 16, 2023
Filing Date:
August 19, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06
Foreign References:
| JP2009038130A | 2009-02-19 | |||
| JP2002094049A | 2002-03-29 | |||
| US20020149067A1 | 2002-10-17 | |||
| JP2014203970A | 2014-10-27 | |||
| JP2017038022A | 2017-02-16 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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