Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/084911
Kind Code:
A1
Abstract:
This semiconductor device has an insulating substrate, a conductive pattern formed on the insulating substrate, and a plurality of semiconductor elements that are provided on the conductive pattern and electrically connected in parallel, wherein: the conductive pattern has the smallest rectangular region surrounding the plurality of semiconductor elements in a plan view; the plurality of semiconductor elements each have an epitaxial layer of a first conductivity type; the plurality of semiconductor elements include a first semiconductor element positioned closest from the center of gravity of the rectangular region, and a second semiconductor element positioned farthest from the center of gravity of the rectangular regions; and a first impurity concentration in the epitaxial layer of the first semiconductor element is higher than a second impurity concentration in the epitaxial layer of the second semiconductor element.
Inventors:
HIYOSHI TORU (JP)
Application Number:
PCT/JP2022/034554
Publication Date:
May 19, 2023
Filing Date:
September 15, 2022
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L25/07; H01L25/18; H01L29/06; H01L29/12; H01L29/47; H01L29/739; H01L29/872
Foreign References:
JPH05335451A | 1993-12-17 | |||
JP2013070084A | 2013-04-18 | |||
JP2006253636A | 2006-09-21 | |||
JP2019067986A | 2019-04-25 | |||
JP2016127435A | 2016-07-11 | |||
JP2020184550A | 2020-11-12 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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