Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/127255
Kind Code:
A1
Abstract:
Provided is a semiconductor device provided with a gate trench portion, and a first trench portion adjacent to the gate trench portion, the semiconductor device comprising: a first conductive-type drift region provided in a semiconductor substrate; a second conductive-type base region provided above the drift region; a first conductive-type emitter region provided above the base region and having a higher doping concentration than the drift region; and a second conductive-type contact region provided above the base region and having a higher doping concentration than the base region. The contact region may have a first contact portion and a second contact portion provided extending from the first trench portion to below the lower end of the emitter region in a mesa portion between the gate trench portion and the first trench portion. The first contact portion may be provided extending from the first trench portion rather than the second contact portion in a trench arrangement direction.
Inventors:
MITSUZUKA KANAME (JP)
KARAMOTO YUKI (JP)
KARAMOTO YUKI (JP)
Application Number:
PCT/JP2022/039640
Publication Date:
July 06, 2023
Filing Date:
October 25, 2022
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L29/12; H01L29/739
Foreign References:
| JP2018061055A | 2018-04-12 | |||
| JP2018195798A | 2018-12-06 | |||
| JP2016111239A | 2016-06-20 |
Attorney, Agent or Firm:
RYUKA & PARTNERS (JP)
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