Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/167161
Kind Code:
A1
Abstract:
In the present invention, a second MOSFET comprises: a body region; a drain region extending in the y direction; a first well region formed away from the drain region in the x direction; a gate electrode formed on a gate insulating film and a field oxide film; a source region formed on the surface of a first well region; an exposed region formed at a position different from the source region in the first well region as viewed from the z direction; a first contact part joined to the source region; a second contact part Schottky-joined to the exposed region; a third contact part joined to the gate electrode; and source wiring that electrically interconnects the first contact part, the second contact part, and the third contact part.
Inventors:
YUKI TADAO (JP)
KIHARA MICHIKO (JP)
KIHARA MICHIKO (JP)
Application Number:
PCT/JP2023/007193
Publication Date:
September 07, 2023
Filing Date:
February 28, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L27/06; H01L21/336; H01L21/822; H01L27/04; H01L29/78
Domestic Patent References:
| WO2018088165A1 | 2018-05-17 | |||
| WO2021106939A1 | 2021-06-03 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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