Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189491
Kind Code:
A1
Abstract:
This semiconductor device includes: a metal oxide layer which is above an insulating surface; and an oxide semiconductor layer which is above the metal oxide layer. The fluorine concentration of the metal oxide layer is at least 1 × 1018 atoms/cm3. In SIMS analysis, the secondary ion intensity of fluorine detected in the metal oxide layer may be at least ten times the secondary ion intensity of fluorine detected in the oxide semiconductor layer. The oxide semiconductor layer may abut the metal oxide layer. The metal oxide layer may include aluminum oxide. The oxide semiconductor layer may include two or more metals that include indium, with the proportion of indium in the two or more metals being 50% or greater.
Inventors:
WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
Application Number:
PCT/JP2023/009646
Publication Date:
October 05, 2023
Filing Date:
March 13, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L29/786; G09F9/30; H01L21/316; H01L21/336; H05B33/02; H10K50/00; H10K59/00
Foreign References:
| JP2016154253A | 2016-08-25 | |||
| JP2012028756A | 2012-02-09 | |||
| JP2017139459A | 2017-08-10 | |||
| JP2013149955A | 2013-08-01 | |||
| JP2002299613A | 2002-10-11 | |||
| JP2002299614A | 2002-10-11 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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