Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/204072
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention comprises: a semiconductor layer that is of a first conductivity type and has a surface; a body region that is of a second conductivity type and is formed on the surface of the semiconductor layer; a source region that is of the first conductivity type, is formed in the body region, and is formed so as to be separated inwardly from an outer edge of the body region; a drain region that is of the first conductivity type, is formed on the surface of the semiconductor layer, and is formed so as to be separated from the body region in a first direction orthogonal to the thickness direction of the semiconductor layer; a gate insulating layer that is formed on a portion, of the surface of the semiconductor layer, between the source region and the drain region in the first direction; a gate electrode that is formed on the gate insulating layer; an exposed region that is formed in the body region at a different position from the source region and in which the semiconductor layer is exposed; and a metal layer that forms a Schottky junction with the exposed region.
Inventors:
SHIMIZU YUSUKE (JP)
Application Number:
PCT/JP2023/014503
Publication Date:
October 26, 2023
Filing Date:
April 10, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L27/06; H01L21/336; H01L21/8234; H01L29/78
Foreign References:
| US20090020826A1 | 2009-01-22 | |||
| JP2003188370A | 2003-07-04 | |||
| JPH08130249A | 1996-05-21 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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